page:p3-p1 glass-encapsulate diodes zener diodes mechanical data cas e:do-41, glass case terminals : solderable per mil-std-202, method 208 polarity: cathode band marking: type number approx. weight: 0.35 grams absolute maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit power dissipation @ t amb 50 p diss 1.0 1) w z-current i z p v /v z ma junction temperature t j 200 storage temperature range t s -55---+ 200 junction ambient i=9.5mm(3/8 ), t l =constant r thja 100 k/w 1)valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. electrical characteristics (tamb=25 unless otherwise specified) parameter symbol min typ max unit forward voltage at i f =200ma v f 1.2 v 1N4728-1n4764 features for use in stabilizing and clipping circuits with high power rating.standard zener voltage tolerance is 10%. add suffix "a" for 5% tolerance. 25.4 min 25.4 min 4.2 max 0.7 max 2.8 max do-41 dimensions in millimeters mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
page:p3-p2 glass-encapsulate diodes 1N4728-1n4764 type nomi nal zener voltage test c urren t maximum dyna mic impedance maximum reverse leakage current max surge c urren t 8.3ms maxi mum regulator current vz@izt i zt zzt@i zt zzk@izk i zk i r @vr i r @t am b =25 i zm @t a m b =50 (v ) (ma) () () (m a) (ua) (v ) (ma) (ma) 1N4728 3 . 3 76 10 400 1.0 100 1 1380 276 1n4729 3 . 6 69 10 400 1.0 100 1 1260 252 1n4730 3.9 64 9 400 1.0 50 1 1190 234 1n4731 4.3 58 9 400 1.0 10 1 1070 217 1n4732 4.7 53 8 500 1.0 10 1 970 1 93 1n4733 5.1 49 7 550 1.0 10 1 890 1 78 1n4734 5.6 45 5 600 1.0 10 2 810 4 62 1n4735 6.2 41 2 700 1.0 10 3 730 1 46 1n4736 6.8 37 3.5 700 1.0 10 4 660 1 33 1n4737 7.5 34 4.0 70 0 0.5 10 5 605 1 21 1n4738 8.2 31 4.5 700 0.5 10 6 550 1 10 1n4739 9.1 28 5.0 70 0 0.5 10 7 500 1 00 1n4740 10 25 7 700 0.25 10 7.6 4 54 91 1n4741 11 23 8 700 0.25 5 8 . 4 414 83 1n4742 12 21 9 700 0.25 5 9 . 1 380 76 1n4743 13 19 10 700 0.25 5 9.9 344 69 1n4744 15 17 14 700 0.25 5 11.4 304 61 1n4745 16 15.5 16 700 0.25 5 12.2 285 57 1n4746 18 14 20 750 0.25 5 13.7 250 50 1n4747 20 12.5 22 750 0.25 5 15.2 225 45 1n4748 22 11.5 23 750 0.25 5 16.7 205 41 1n4749 24 10.5 25 750 0.25 5 18.2 190 38 1n4750 27 9.5 3 5 750 0.25 5 20.6 170 34 1n4751 30 8.5 4 0 1000 0. 25 5 22.8 150 30 1n4752 33 7.5 4 5 1000 0. 25 5 25.1 135 27 1n4753 36 7.0 5 0 1000 0. 25 5 27.4 125 25 1n4754 39 6.5 6 0 1000 0. 25 5 29.7 115 23 1n4755 43 6.0 7 0 1500 0. 25 5 32.7 110 22 1n4756 47 5.5 8 0 1500 0. 25 5 35.8 95 19 1n4757 51 5.0 9 5 1500 0. 25 5 38.8 90 18 1n4758 56 4.5 110 2000 0. 25 5 42.6 80 16 1n4759 62 4.0 125 2000 0. 25 5 47.1 70 14 1n4760 68 3.7 150 2000 0. 25 5 51.7 65 13 1n4761 75 3.3 175 2000 0. 25 5 56.0 60 12 1n4762 82 3.0 200 3000 0. 25 5 62.2 55 11 1n4763 91 2.8 250 3000 0. 25 5 69.2 50 10 1n4764 100 2.5 350 3000 0. 25 5 79.0 45 9 the zener impedance is derived from the 60 hz ac voltage which results when an ac current having an rms value equal,to 10% of the zener current (izt or izk) is superimposed on izt or izk. zener impedance is measured at two points to insure,a sharp knee on the breakdown curve and to eliminate unstable units. mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
page:p3-p3 glass-encapsulate diodes typical characteristics i n 4 7 5 8 i n 4 7 4 4 i n 4 7 4 3 0 0 10 10 ma iz 20 30 40 50 i n 4 7 4 2 2 0 30 40 50 i n 4 7 5 3 i n 4 7 5 1 i n 4 7 5 0 i n 4 7 5 2 i n 4 7 4 9 i n 4 7 4 8 i n 4 7 4 7 i n 4 7 4 5 i n 4 7 4 6 i n 4 7 5 5 i n 4 7 5 4 i n 4 7 5 7 i n 4 7 5 6 10 0 0 1 30 20 50 40 iz 10 0 70 60 90 80 ma 23 4 5 i n 4 7 2 8 i n 4 7 2 7 i n 4 7 3 1 i n 47 2 9 i n 4 7 3 0 i n 4 7 3 2 i n 4 7 3 3 i n 4 7 6 3 i n 4 7 6 2 i n 4 7 6 1 i n 4 7 6 0 in 4 7 5 9 vz 60 70 80 9 0 i n 4 7 6 4 100 110 1 2 0 in... t j =25 c o i n 4 7 4 0 vz 6 7 i n 4 7 3 6 in 4 7 3 7 89 i n 4 7 3 8 i n 4 7 3 9 in 4 7 3 5 i n 4 7 3 4 10 11 i n 4 7 4 1 12 in ... t j =25 c o 100 0 0 0.2 0.4 0.8 0.6 1.0 2 00 t a , ambient t emperature fig. 1 power dissipation vs ambient temperature p d . tot al pow er dissipation (w) r ja therma l resi stance junction to ambient (c/w) i, lead length (mm) fig. 2 typical thermal resistance vs. lead length 0 05 1015 50 100 150 30 20 25 200 250 v r =30v v r =20v v r =5v v r =2v v r =0v f=1m h z t a =2 5 c 50 vz, zene r voltage (v) fig. 3 junction capacitance vs zener voltage c j , diod e capacitance (pf) 100 1 0102 0 3040 10 1000 differen tial z ene r impedance ( ) 100 2ma vz, zener voltage (v) fig. 4 typical zener impedance vs. zener voltage 60 1 1 10ma 20ma 10 5ma 10 100 iz=1 ma 1000 1N4728-1n4764 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
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